1. Leading the Edge: Wafer-scale Epitaxy of Single-crystal, non-Silicon Monolayer Semiconducting Materials with Ultrahigh Mobility
The pursuit of next-generation electronics centers on the identification of viable alternatives to traditional silicon-based materials, prioritizing synthetic scalability, compatibility with existing industrial processes, optimal crystallinity, and, crucially, ultra-high mobility. Chemical vapor deposition (CVD) & Metal-Organic CVD (MOCVD) serve as vital techniques for synthesizing materials by precisely arranging dissimilar atoms into functional molecules. This process facilitates the establishment of a perfect, periodic lattice structure that extends uniformly across the entire substrates, ensuring wafer-scale consistencies in both quality and electronic properties comparable to those achieved through mechanical exfoliation.
Current research initiatives focus on several key areas: (a) lattice orientations; (b) heterogeneous junctions; (c) doping strategies; (d) metal contact optimization; and (e) integrated device architectures. These advancements are driving applications in various fields, including but not limited to the Internet of Things (IoT), flexible electronics, and the development of next-generation semiconductor devices.
Collaboration:
Prof. Jeehwan Kim and Prof. Jing Kong at MIT;
Prof. Lance Li at NUS;
Prof. Kosuke Nagashio at UTokyo
Prof. Deep Jariwalla at UPenn;
Prof. Sang-Hoon Bae at the University of Washington, St. Loius;
Prof. Wen-Hao Chang at NCTU, Taiwan;
Prof. Yi-Chia Chou at NTU, Taiwan;
TSMC